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- Patents > 2007-01-25 > SECTION H ELECTRICITY > BASIC ELECTRIC ELEMENTS > SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
Non-volatile memory device having fin-type channel region and method of fabricating the same
A non-volatile memory device with improved integration and/or improved performance by reducing an area per bit and controlling a body bias, and a method of fabricating the same. The non-volatile memory device may use surface portions of the outer side surfaces and/or the upper surfaces of at least one pair of fins protruding from a body and extending, spaced from each other along one direction, as at least one pair of channel regions. At least one control gate electrode may be formed across the channel regions, and at least one pair of storage nodes may be interposed in at least one portion between the control gate electrode and the channel regions.
Filed on: 2006-07-20; Application Number: 11489445
Applicant(s)Suk pil Kim
Won Joo Kim
Yoon Dong Park
Eun Hong Lee
Jae Woong Hyun
Sung Jae Byun
Jung Hoon Lee