You are not logged in!
Do you want to login? It's free!

Sun, 29 March 2015.
Check the latest stories & news.

ALERT

After nearly seven years of providing public data, we have decided to shut down the www.implu.com website. Our final day of operation will be March 31, 2015. Thank you for using www.implu.com!

Search implu: Advanced

Who do you implu?    Create a Free Account!


Poly etch without separate oxide decap

Abstract

The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, that may be used in manufacturing a variety of electronic devices such as integrated circuits (ICs) and micro electromechanical (MEM) devices. The etching solution is formed by adding 35% ammonium hydroxide solution to a hot 12.5% TMAH solution at about 70 C. at a rate of 1% by volume, every hour. Such an etch solution and method provides a simple, inexpensive, single step self initiating poly etch that has etch stop ratios of over 200 to 1 over underlying insulator layers and TiN layers.

Filed on: 2007-03-22; Application Number: 11726506

Applicant(s)

Kevin Shea

Agent

SCHWEGMAN LUNDBERG WOESSNER KLUTH P A

Assignee

Micron Technology Inc